A standout example is the demonstration of a FEBID-based single-electron transistor (SET) as shown in the upper image. This nanoscale device showcases the ability to achieve quantum functionality with unparalleled precision, thanks to the atomic-level control offered by FEBID. The direct-write approach ensures optimal placement and connectivity of the quantum dot within the transistor structure, enabling reliable and efficient single-electron tunneling behavior. This breakthrough highlights the potential of direct-write nanomanufacturing for quantum electronics and low-power computing applications. Another notable example is the demonstration of directly written FEBID-based memristors (lower image), enabling resistive switching devices with excellent control over dimensions and material properties. These memristors are key components for neuromorphic computing, offering energy-efficient and scalable solutions for next-generation electronics.

These methods address the demands of scalable, precise, and high-performance nanoelectronics, opening pathways for the development of ultra-fast and miniaturized nanoscale components.